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 Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA656
DESCRIPTION *With TO-3 package *Wide area of safe operation *Complement to type 2SC519 APPLICATIONS *For audio frequency and power amplifier applications
PINNING(see Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION
Absolute maximum ratings(Ta=)
SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE -130 -130 -5 -7 50 150 -55~150 UNIT V V V A W
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
2SA656
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=-25mA ;IB=0
-130
V
V(BR)CBO
Collector-base breakdown voltage
IC=-1mA ;IE=0
-130
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-1mA ;IC=0
-5
V
VCEsat
Collector-emitter saturation voltage
IC=-5A; IB=-1A
-2.0
V
VBEsat
Base-emitter saturation voltage
IC=-5A; IB=-1A
-2.5
V
ICBO
Collector cut-off current
VCB=-130V; IE=0
-0.1
mA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-0.1
mA
hFE
DC current gain
IC=-1A ; VCE=-5V
30
300
COB
Collector output capacitance
IE=0; VCB=-10V;f=1MHz
150
pF
fT
Transition frequency
IC=-1A ; VCE=-10V
5
MHz
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA656
Fig.2 outline dimensions (unindicated tolerance:0.1mm)
3


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